H2N4401 transistor equivalent, npn epitaxial planar transistor.
* Complementary to H2N4403
* High Power Dissipation: 625 mW at 25°C
* High DC Current Gain: 100-300 at 150mA
* High Breakdown Voltage: 40 V Min.
TO-92
A.
Features
* Complementary to H2N4403
* High Power Dissipation: 625 mW at 25°C
* High DC Current Gain: 100-3.
The H2N4401 is designed for general purpose switching and amplifier applications.
Features
* Complementary to H2N4403
* High Power Dissipation: 625 mW at 25°C
* High DC Current Gain: 100-300 at 150mA
* High Breakdown Voltage: 40 V Mi.
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